IRG4PH50K Datasheet, PDF (1/6 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)

PD - 9.1576
IRG4PH50K
INSULATED GATE BIPOLAR TRANSISTOR
Features
q High short circuit rating optimized for motor control,
t_sc =10µs, V_CC = 720V, T_J = 125°C, V_GE = 15V
q Combines low conduction losses with high
switching speed
q Latest generation design provides tighter
parameter distribution and higher efficiency than
previous generations
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
V_CES = 1200V
V_{CE(on) typ.} = 2.77V
@V_GE = 15V, I_C = 24A
Benefits
q As a Freewheeling Diode we recommend our HEXFRED^TM
ultrafast, ultrasoft recovery diodes for minimum EMI/Noise
and switching losses in the Diode and IGBT
q Latest generation 4 IGBTs offer highest power density
motor controls possible
q This part replaces the IRGPH50K and IRGPH50M devices
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
t_sc
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Œ
Clamped Inductive Load Current 
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Ž
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
R_θJC
R_θCS
R_θJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
TO-247 AB
Max.
1200
45
24
90
90
10
±20
190
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Typ.
—
0.24
—
6 (0.21)
Max.
0.64
—
40
—
Units
°C/W
g (oz)
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