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IRG4PH40UDPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD- 95188A
IRG4PH40UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
 UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
 New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
 IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
 Industry standard TO-247AC package
 Lead-Free
Benefits
 Higher switching frequency capability than
competitive IGBTs
 Highest efficiency available
 HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
1200
41
21
82
82
8.0
130
± 20
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfÂin (1.1NÂm)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Min.
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
Typ.
ÂÂÂ
ÂÂÂ
0.24
ÂÂÂ
6 (0.21)
Max.
0.77
1.7
ÂÂÂ
40
ÂÂÂ
Units
°C/W
g (oz)
1
05/27/11
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