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IRG4PH40UD2 Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD - 94739
IRG4PH40UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
 UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
 New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
 IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
 Industry standard TO-247AC package
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
Benefits
 Higher switching frequency capability than
competitive IGBTs
 Highest efficiency available
 HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
ÃÂ Pulse Collector Current
 Clamped Inductive Load current
IF @ Tc = 100°C Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
RθJA
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Wt
Weight
www.irf.com
Max.
600
40
20
160
160
10
40
±20
160
65
-55 to +150
y y 300 (0.063 in. (1.6mm) from case)
10 lbf in (1.1N m)
Units
V
A
V
W
°C
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.24
âââ
6 (0.21)
Max.
0.77
2.5
âââ
40
âââ
Units
°C/W
g (oz.)
1
07/31/03
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