IRG4PH40UD2-EPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 95239
IRG4PH40UD2-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ^{UltraFast CoPack IGBT}
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast IGBT optimized for high operating
frequencies up to 200kHz in resonant mode
• IGBT co-packaged with HEXFRED^TM ultrafast
ultra-soft-recovery anti-parallel diode for use in
resonant circuits
G
V_CES = 1200V
V_{CE(on) typ.} = 2.43V
• Industry standard TO-247AD package with
extended leads
E
@V_GE = 15V, I_C = 21A
• Lead-Free
Benefits
• Higher switching frequency capability than
n-channel
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less / no snubbing
Applications
• Induction cooking systems
• Microwave Ovens
• Resonant Circuits
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C
I_CM
I_LM
Continuous Collector Current
Ù Pulse Collector Current
d Clamped Inductive Load current
I_F @ Tc = 100°C Diode Continuous Forward Current
I_FM
Diode Maximum Forward Current
V_GE
Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw
TO-247AD
Max.
1200
41
21
82
82
10
40
±20
160
65
-55 to +150
y y 300 (0.063 in. (1.6mm) from case)
10 lbf in (1.1N m)
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
R_θJC
R_θJC
R_θCS
R_θJA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.77
2.5
–––
40
–––
Units
°C/W
g (oz.)
1
7/27/04