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IRG4PH40UD2-EP Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD - 95239
IRG4PH40UD2-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
 UltraFast IGBT optimized for high operating
frequencies up to 200kHz in resonant mode
 IGBT co-packaged with HEXFREDTM ultrafast
ultra-soft-recovery anti-parallel diode for use in
resonant circuits
G
VCES = 1200V
VCE(on) typ. = 2.43V
 Industry standard TO-247AD package with
extended leads
E
@VGE = 15V, IC = 21A
 Lead-Free
Benefits
 Higher switching frequency capability than
n-channel
competitive IGBTs
 Highest efficiency available
 HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less / no snubbing
Applications
 Induction cooking systems
 Microwave Ovens
 Resonant Circuits
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
ÃÂ Pulse Collector Current
d Clamped Inductive Load current
IF @ Tc = 100°C Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw
TO-247AD
Max.
1200
41
21
82
82
10
40
±20
160
65
-55 to +150
y y 300 (0.063 in. (1.6mm) from case)
10 lbf in (1.1N m)
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.24
âââ
6 (0.21)
Max.
0.77
2.5
âââ
40
âââ
Units
°C/W
g (oz.)
1
7/27/04
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