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IRG4PH30KD Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) | |||
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PD- 91579A
IRG4PH30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
⢠High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
⢠Combines low conduction losses with high
G
switching speed
⢠Tighter parameter distribution and higher efficiency
than previous generations
⢠IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
E
n-channel
Benefits
⢠Latest generation 4 IGBT's offer highest power density
motor controls possible
⢠HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
⢠This part replaces IRGPH30MD2 products
⢠For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.10V
@VGE = 15V, IC = 10A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
20
10
40
40
10
40
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfâ¢in (1.1 Nâ¢m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.24
âââ
6 (0.21)
Max.
1.2
2.5
âââ
40
âââ
Units
°C/W
g (oz)
www.irf.com
1
2/7/2000
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