IRG4PC60F-PPBF Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR (Fast Speed IGBT)

PD - 95567
IRG4PC60F-PPbF
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Solder plated version of industry standard
TO-247AC package.
• Lead-Free
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specified application conditions.
• Solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
• Designed for best performance when used with IR
HEXFRED & IR FRED companion diodes.
Fast Speed IGBT
V_CES = 600V
V_CE(on) typ. = 1.50V
@V_GE = 15V, I_C = 60A
TO-247AC
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Maximum Reflow Temperature ‡
Max.
600
90
60
120
120
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
230 (Time above 183°C
should not exceed 100s)
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (Typical Socket Mount)
Junction-to-Ambient (PCB Mount, Steady State)†
Weight
Typ.
–––
0.24
–––
–––
6 (0.21)
Max.
0.24
–––
40
20
–––
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Units
V
A
V
mJ
W
°C
°C
Units
°C/W
g (oz)
1
07/15/04