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IRG4PC50WPBF Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
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PD - 94858
IRG4PC50WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
 Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
 Industry-benchmark switching losses improve
efficiency of all power supply topologies
 50% reduction of Eoff parameter
 Low IGBT conduction losses
 Latest-generation IGBT design and construction
offers tighter parameters distribution, exceptional
reliability
 Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) max. = 2.30V
@VGE = 15V, IC = 27A
Benefits
 Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
 Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
 Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Â
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
55
27
220
220
± 20
170
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfÂin (1.1NÂm)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Typ.
ÂÂÂ
0.24
ÂÂÂ
6 (0.21)
Max.
0.64
ÂÂÂ
40
ÂÂÂ
Units
°C/W
g (oz)
1
11/26/03
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