IRG4PC50S-P Datasheet, PDF (1/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

PD - 91581B
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50S-P
Standard Speed IGBT
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Surface Mountable
C
G
E
n-channel
V_CES = 600V
V_{CE(on) typ.} = 1.28V
@V_GE = 15V, I_C = 41A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max Reflow Temperature
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
1
Surface Mountable
TO-247
Max.
600
70
41
140
140
± 20
20
200
78
-55 to + 150
225
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
Max.
0.64
–––
40
Units
°C/W
www.irf.com
05/14/02