IRG4PC40UDPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 94937
IRG4PC40UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz
in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFRED^TM ultrafast, ultra-
soft recovery anti-parallel diodes for use in bridge
configurations
• Industry standard TO-247AC package
• Lead-Free
Benefits
• Generation -4 IGBT’s offer highest efficiencies available
• IGBT’s optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBT’s.
Minimized recovery characteristics require less/no snubbing
• Designed to be a “drop-in” replacement for equivalent
industry-standard Generation 3 IR IGBT’s
www.irf.com
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1/12/04