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IRG4PC40UD-EPBF Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD - 94937
IRG4PC40UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
⢠UltraFast: Optimized for high operating frequencies 8-40 kHz
in hard switching, >200 kHz in resonant mode
⢠Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
⢠IGBT co-packaged with HEXFREDTM ultrafast, ultra-
soft recovery anti-parallel diodes for use in bridge
configurations
⢠Industry standard TO-247AC package
⢠Lead-Free
Benefits
⢠Generation -4 IGBTÂs offer highest efficiencies available
⢠IGBTÂs optimized for specific application conditions
⢠HEXFRED diodes optimized for performance with IGBTÂs.
Minimized recovery characteristics require less/no snubbing
⢠Designed to be a Âdrop-in replacement for equivalent
industry-standard Generation 3 IR IGBTÂs
www.irf.com
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1/12/04
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