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IRG4PC30UDPBF Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD - 95327
IRG4PC30UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
 UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200 kHz
in resonant mode
 Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
Generation 3
 IGBT co-packaged with HEXFREDTM ultrafast,
E
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
 Industry standard TO-247AC package
 Lead-Free
n-channel
Benefits
 Generation -4 IGBT's offer highest efficiencies available
 IGBT's optimized for specific application conditions
 HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
 Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Max.
600
23
12
92
92
12
92
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfÂin (1.1 NÂm)
Units
V
A
V
W
°C
Min.
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------
-----
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Typ.
------
------
0.24
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6 (0.21)
Max.
1.2
2.5
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40
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Units
°C/W
g (oz)
1
6/1/04
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