IRG4PC20UPBF Datasheet, PDF (1/8 Pages) International Rectifier – UltraFast Speed 1GBT (VCES=600V , VCE(on)typ.=1.85V , @VGE=15V , Ic=6.5A )

PD - 97289
IRG4PC20UPbF
PROVISIONAL
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Lead-Free
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
C
G
E
n-channel
C
V_CES = 600V
V_{CE(on) typ.} = 1.85V
@V_GE = 15V, I_C = 6.5A
E
C
G
TO-247AC
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
P_D @T_C = 25°C
P_D @T_C = 100°C
T_J
T_STG
Collector-toEmitter Breakdown Voltage
Continuous Collector Current, V_GE @ 15V
Continuous Collector, V_GE @ 15V
c Pulsed Collector Current
d Clamped Inductive Load Current
Gate-to-Emitter Voltage
e Reverse Voltage Avalanche Energy
Power Dissipation
Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Max.
600
13
6.5
52
52
±20
5.0
60
24
-55 to + 150
300 (0.063 in.) (1.6mm from case)
x x 10lb in (1.1N m)
Units
V
A
V
mJ
W
°C
N
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
1
07/11/07