IRG4P254S Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISOR

PD -91591A
IRG4P254S
INSULATED GATE BIPOLAR TRANSISTOR
Standard Speed IGBT
Features
• Standard: Optimized for minimum saturation
voltage and operating frequencies up to 10kHz
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
G
E
n-channel
V_CES = 250V
V_{CE(on) typ.} = 1.32V
@V_GE = 15V, I_C = 55A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• High Power density
• Lower conduction losses than similarly rated MOSFET
• Lower Gate Charge than equivalent MOSFET
• Simple Gate Drive characteristics compared to Thyristors
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
R_θJC
R_θCS
R_θJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
* Package limited to 70A
www.irf.com
TO-247AC
Max.
250
98*
55
196
196
± 20
160
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
4/15/2000