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IRG4MC40U_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements | |||
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PD-94305F
INSULATED GATE BIPOLAR TRANSISTOR
IRG4MC40U
UltraFast Speed IGBT
Features
C
⢠Electrically Isolated and Hermetically Sealed
⢠Simple Drive Requirements
⢠Latch-proof
⢠UltraFast Speed Operation 8KHz - 40KHz,
> 200KHz in Resonent Mode
⢠High Operating Frequency
⢠Switching-loss Rating includes all "tail" Losses
⢠Ceramic Eyelets
Benefits
G
E
N-Channel
⢠Generation 4 IGBTs offer highest efficiency available
⢠IGBT's optimized for specified application conditions
⢠Designed to be a "drop-in" replacement for equivalent
IR A&D Generation 3 IGBTs
VCES = 600V
VCE(on)max = 2.1V
@VGE =15V, IC = 20A
Insulated Gate Bipolar Transistors (IGBTs) from
International Rectifier have higher usable current
densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements
of the familiar power MOSFET. They provide
substantial benefits to a host of high-voltage, high-
current applications.
TO-254AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Max.
600
35*
20
140
140
± 20
114
45
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
Units
V
A
V
W
°C
g
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
â â 1.1 °C/W
Test Conditions
www.irf.com
1
06/23/08
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