IRG4MC30F_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-94313D
INSULATED GATE BIPOLAR TRANSISTOR
IRG4MC30F
Fast Speed IGBT
Features
C
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed Operation 3 kHz - 8 kHz
• High Operating Frequency
• Switching-loss Rating includes all "tail" losses
• Ceramic Eyelets
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
Insulated Gate Bipolar Transistors (IGBTs) from
International Rectifier have higher usable current
densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements
of the familiar power MOSFET. They provide
substantial benefits to a host of high-voltage, high-
current applications.
V_CES = 600V
V_{CE(on) max} =1.7V
@V_GE = 15V, I_C = 15A
TO-254AA
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current À
Clamped Inductive Load Current Á
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Max.
600
28
15
112
112
± 20
75
30
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
Units
V
A
V
W
°C
g
Thermal Resistance
Parameter
RthJC
Junction-to-Case
www.irf.com
Min Typ Max Units
— — 1.67 °C/W
Test Conditions
1
01/10/13