IRG4IBC30SPBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD - 95637A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation
voltage and low operating freqencies (<1 kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• Industry standard TO-220 Full-Pak
• Lead-Free
IRG4IBC30SPbF
C
G
E
N-channel
V_CES = 600V
V_{CE(on) typ.} = 1.4V
@V_GE = 15V, I_C = 18A
Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• Designed to be a "drop-in" replacement for equivalent
industry -standard Generation 3 IR IGBTs
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
Wt
Parameter
Junction-to-Case
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220 Full-Pak
Max.
600
23.5
13.0
47
47
± 20
10
45
18
-55 to + 150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
mJ
W
°C
Typ.
–––
–––
2.1 (0.075)
Max.
2.8
65
–––
Units
°C/W
g (oz)
1
06/17/2010