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IRG4IBC30KDPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT TECOVERY DIODE
PD -95597A
IRG4IBC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• High switching speed optimized for up to 25kHz
with low VCE(on)
• Short Circuit Rating 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220 FULLPAK
• Lead-Free
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 9.2A
Benefits
• Generation 4 IGBTs offer highest efficiencies available
maximizing the power density of the system
• IGBT's optimized for specific application conditions
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise EMI
• Designed to exceed the power handling capability of
equivalent industry-standard IGBT
Absolute Maximum Ratings
TO-220 FULLPAK
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VISOL
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current …
Clamped Inductive Load Current ‚…
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Max.
600
17
9.2
34
34
9.2
34
10
2500
± 20
45
18
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Typ.
–––
–––
–––
2.0 (0.07)
Max.
2.8
3.7
65
–––
Units
V
A
µs
V
W
°C
Units
°C/W
g (oz)
www.irf.com
1
06/11/2010