IRG4IBC20WPBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – Designed expressly for Switch-Mode Power

PD -95636A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• 2.5kV, 60s insulation voltage †
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Industry standard Isolated TO-220 Fullpak^TM
outline
• Lead-Free
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
IRG4IBC20WPbF
C
G
E
n-channel
V_CES = 600V
V_{CE(on) typ.} = 2.16V
@V_GE = 15V, I_C = 6.5A
TO-220 FULLPAK
Max.
600
12
6.0
52
52
± 20
200
34
14
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
R_θJC
R_θJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
2.0 (0.07)
Max.
3.7
65
–––
Units
°C/W
g (oz)
www.irf.com
1
06/11/2010