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IRG4IBC20FDPBF Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD -94915
IRG4IBC20FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
⢠Very Low 1.66V votage drop
⢠2.5kV, 60s insulation voltage Â
⢠4.8 mm creapage distance to heatsink
⢠Fast: Optimized for medium operating
G
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
⢠IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
⢠Tighter parameter distribution
⢠Industry standard Isolated TO-220 FullpakTM
E
n-channel
outline
⢠Lead-Free
Fast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
Benefits
⢠Simplified assembly
⢠Highest efficiency and power density
⢠HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
TO-220 FULLPAK
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
Visol
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to CaseÂ
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
14.3
7.7
64
64
6.5
64
2500
± 20
34
14
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfâ¢in (1.1 Nâ¢m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
âââ
âââ
âââ
2.0 (0.07)
Max.
3.7
5.1
65
âââ
Units
°C/W
g (oz)
1
12/30/03
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