IRG4IBC20FD Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD -91750A
IRG4IBC20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Very Low 1.66V votage drop
• 2.5kV, 60s insulation voltage U
• 4.8 mm creapage distance to heatsink
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• IGBT co-packaged with HEXFRED^TM ultrafast,
ultrasoft recovery antiparallel diodes
• Tighter parameter distribution
• Industry standard Isolated TO-220 Fullpak^TM
outline
Benefits
G
E
n-channel
• Simplified assembly
• Highest efficiency and power density
• HEXFRED^TM antiparallel Diode minimizes
switching losses and EMI
Fast CoPack IGBT
V_CES = 600V
V_{CE(on) typ.} = 1.66V
@V_GE = 15V, I_C = 9.0A
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
Visol
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to CaseU
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
R_θJC
R_θJC
R_θJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
TO-220 FULLPAK
Max.
600
14.3
7.7
64
64
6.5
64
2500
± 20
34
14
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Typ.
–––
–––
–––
2.0 (0.07)
Max.
3.7
5.1
65
–––
Units
°C/W
g (oz)
1
4/24/00