IRG4IBC10UDPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 95603B
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC10UDPbF
UltraFast Co-Pack IGBT
Features
l UltraFast: Optimized for high operating up to
80 kHz in hard switching, >200 kHz in
resonant mode
l Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
l IGBT co-packaged with HEXFRED^® ultrafast, ultra-
soft recovery anti-parallel diodes for use in bridge
configurations
l Industry standard TO-220 Full-Pak
l Lead-Free
C
G
E
n-channel
V_CES = 600V
V_{CE(on) typ.} = 2.15V
@V_GE=15V, I_C=5.0A
t_{f (typ.)} = 140ns
Benefits
l Generation 4 IGBTs offer highest efficiencies available
l IGBTs optimized for specifica application conditions
l HEXFRED^® diodes optimized for performace with IGBTs
Minimized recovery characteristics require less/no
snubbing
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
Collector-toEmitter Breakdown Voltage
Continuous Collector Current, V_GE @ 15V
I_C @ T_C = 100°C
I_CM
I_LM
I_F@Tc = 100°C
Continuous Collector, V_GE @ 15V
c Pulsed Collector Current
d Clamped Inductive Load Current
d Diode Continuous Forward Current
I_FM
Diode Maximum Forward Current
V_ISOL
V_GE
rms Isolated Voltage, Terminal to case, t=1min
Gate-to-Emitter Voltage
P_D @T_C = 25°C
Power Dissipation
P_D @T_C = 100°C Power Dissipation
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R_θJC
Junction-to-Case - IGBT
R_θJC
Junction-to-Case - Diode
R_θJA
Junction-to-Ambient, typical socket mount
Wt
Weight
www.irf.com
TO-220AB
Max.
600
6.8
3.9
27
27
3.9
27
2500
±20
25
10
-55 to + 150
300 (0.063 in.) (1.6mm from case)
x x 10lb in (1.1N m)
Units
V
A
V
W
°C
N
Typ.
–––
–––
–––
2.1 (0.075)
Max.
5.0
9.0
65
–––
Units
°C/W
g (oz)
1
01/28/2011