IRG4IBC10UD Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 93765
IRG4IBC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast Co-Pack IGBT
Features
C
V_CES = 600V
• UltraFast: Optimized for high operating up to
80 kHz in hard switching, > 200 kHz in
resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED® ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard TO-220 Full-Pak
G
E
N-channel
V_{CE(on) typ.} = 2.15V
@V_GE = 15V, I_C = 5.0A
t_f(typ.) = 140ns
Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED® diodes optimized for performance with IGBTs
Minimized recovery characteristics require less/no snubbing
TO-220 Full-Pak
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
V_ISOL
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolated Voltage, Terminal to case, t=1min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec
Mounting Torque, 6-32 or M3 Screw
Max.
600
6.8
3.9
27
27
3.9
27
2500
± 20
25
10
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
R_θJC
R_θJC
R_θJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
–––
2.1 (0.075)
Max.
5.0
9.0
65
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1
10/27/99