IRG4CH40SB Datasheet, PDF (1/1 Pages) International Rectifier – IGBT Die in Wafer Form

IRG4CH40SB IGBT Die in Wafer Form
PD-91799A
IRG4CH40SB
C
G
E
1200 V
Size 4
Standard Speed
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
Test Conditions
V_{CE (on)}
V_(BR)CES
V_GE(th)
I_CES
I_GES
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
4.5V Max.
1200V Min.
3.0V Min., 6.0V Max.
300 µA Max.
± 11 µA Max.
I_C = 10A, T_J = 25°C, V_GE = 15V
T_J = 25°C, I_CES = 250µA, V_GE = 0V
V_GE = V_CE , T_J =25°C, I_C =250µA
T_J = 25°C, V_CE = 1200V
T_J = 25°C, V_GE = +/- 20V
Mechanical Data
Nominal Backmetal Composition, Thickness:
Cr-NiV-Ag ( 1kA-2kA-2.5kA )
Nominal Front Metal Composition, Thickness:
99% Al, 1% Si (4 microns)
Dimensions:
0.170" x 0.243"
Wafer Diameter:
150mm, with std. < 100 > flat
Wafer thickness:
.015" + / -.003"
Relevant Die Mechanical Dwg. Number
01-5242
Minimum Street Width
100 Microns
Reject Ink Dot Size
0.25mm Diameter Minimum
Ink Dot Location
Consistent throughout same wafer lot
Recommended Storage Environment:
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Die Attach Conditions
For optimum electrical results, die attach
temperature should not exceed 300C
Reference Standard IR packaged part ( for design ) : IRG4PH40S
Die Outline
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
2. CONTROLLING DIMENSION: (INCH).
3. LETTER DESIGNATION:
S = SOURCE
SK = SOURCE KELVIN
G = GATE
IS = CURRENT SENSE
4. DIMENSIONAL TOLERANCES:
BONDING PADS: < 0.635 TOLERANCE = +/- 0.013
WIDTH
< (.0250) TOLERANCE = +/- (.0005)
&
< 0.635 TOLERANCE = +/- 0.025
LENGTH
< (.0250) TOLERANCE = +/- (.0010)
OVERALL DIE: < 1.270 TOLERANCE = +/- 0.102
WIDTH
< (.050) TOLERANCE = +/- (.004)
&
< 0.635 TOLERANCE = +/- 0.203
LENGTH
< (.050) TOLERANCE = +/- (.008)
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III
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