IRG4CC10KB Datasheet, PDF (1/1 Pages) International Rectifier – IRG4CC10KB IGBT Die in Wafer Form

IRG4CC10KB IGBT Die in Wafer Form
PD- 91825
IRG4CC10KB
C
G
E
600 V
Size 1
Ultra-Fast Speed
Short Circuit Rated
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
V_{CE (on)}
Collector-to-Emitter Saturation Voltage
4.5V Max.
V_(BR)CES Colletor-to-Emitter Breakdown Voltage
600V Min.
V_GE(th)
Gate Threshold Voltage
3.0V Min., 6.5V Max.
I_CES
Zero Gate Voltage Collector Current
250µA Max.
I_GES
Gate-to-Emitter Leakage Current
± 1.1µA Max.
Mechanical Data
Test Conditions
I_C = 1.5A, T_J = 25°C, V_GE = 15V
T_J = 25°C, I_CES = 250µA, V_GE = 0V
V_GE = V_CE , T_J =25°C, I_C =250µA
T_J = 25°C, V_CE = 600V
T_J = 25°C, V_GE = +/- 20V
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Recommended Die Attach Conditions
Reference Standard IR packaged part ( for design ) : IRG4BC10K
Die Outline
Cr-NiV-Ag (1 kA-2kA-2.5kA )
99% Al, 1% Si (4 microns)
.080" x .120"
150mm, with std. < 100 > flat
.015" + / -.003"
01-5274
100 Microns
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
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12\4\98