IRG4BH20K-S Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD -93960
IRG4BH20K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
t_sc =10µs @ V_CC = 720V , T_J = 125°C,
V_GE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• Industry standard D²Pak package
Benefits
• As a Freewheeling Diode we recommend our
HEXFRED^TM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
V_CES = 1200V
V_{CE(on) typ.} = 3.17V
@V_GE = 15V, I_C = 5.0A
D²Pak
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
t_sc
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
11
5.0
22
22
10
±20
130
60
24
-55 to +150
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
R_θJC
R_θCS
R_θJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
1
8/17/00