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IRG4BC40UPBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
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PD - 95428A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40UPbF
UltraFast Speed IGBT
Features
 UltraFast: optimized for high operating
frequencies 8-40 KHz in hard switching, >200
kHz in resonant mode
 Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
 Industry standard TO-220AB package
 Lead-Free
C
G
E
n-channel
Benefits
 Generation 4 IGBTs offer highest efficiency available
 IGBTs optimized for specified application conditions
 Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
VCES = 600V
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Â
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
600
40
20
160
160
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfÂin (1.1NÂm)
Units
V
A
V
mJ
W
°C
Min.
------
------
------
------
Typ.
------
0.50
------
2 (0.07)
Max.
0.77
------
80
------
Units
°C/W
g (oz)
1
02/18/10
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