IRG4BC40KPBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD -95174A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short Circuit Rated UltraFast: optimized for high
operating frequencies >5.0KHz , and Short Circuit
Rated to 10µs @ 125°C, V_GE = 15V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
• Industry standard TO-247AC package
• Lead-Free
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
IRG4BC40KPbF
Short Circuit Rated
UltraFast IGBT
C
V_CES = 600V
G
E
n-channel
V_{CE(on) typ.} = 2.1V
@V_GE = 15V, I_C = 25A
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
t_sc
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
R_θJC
R_θCS
R_θJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
600
42
25
84
84
10
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Typ.
–––
0.50
–––
2 (0.07)
Max.
0.77
–––
80
–––
Units
°C/W
g (oz)
1
02/17/10