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IRG4BC40KPBF Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
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PD -95174
INSULATED GATE BIPOLAR TRANSISTOR
Features
⢠Short Circuit Rated UltraFast: optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
⢠Generation 4 IGBT design provides higher efficiency
than Generation 3
⢠Industry standard TO-247AC package
⢠Lead-Free
Benefits
⢠Generation 4 IGBTs offer highest efficiency available
⢠IGBTs optimized for specified application conditions
IRG4BC40KPbF
Short Circuit Rated
UltraFast IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 2.1V
@VGE = 15V, IC = 25A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
600
42
25
84
84
10
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfâ¢in (1.1Nâ¢m)
Units
V
A
µs
V
mJ
W
°C
Typ.
âââ
0.50
âââ
2 (0.07)
Max.
0.77
âââ
80
âââ
Units
°C/W
g (oz)
1
04/23/04
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