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IRG4BC30U Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) | |||
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PD - 91452E
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30U
UltraFast Speed IGBT
Features
⢠UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
⢠Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
⢠Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
Benefits
⢠Generation 4 IGBTs offer highest efficiency available
⢠IGBTs optimized for specified application conditions
⢠Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
23
12
92
92
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfâ¢in (1.1Nâ¢m)
Units
V
A
V
mJ
W
°C
Typ.
âââ
0.50
âââ
2 (0.07)
Max.
1.2
âââ
80
âââ
Units
°C/W
g (oz)
1
4/17/2000
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