IRG4BC30SS Datasheet, PDF (1/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

PD - 94069
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30S-S
Standard Speed IGBT
Features
• Standard: optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tight
parameter distribution and high efficiency
C
G
E
n-channel
V_CES = 600V
V_{CE(on) typ.} = 1.4V
@V_GE = 15V, I_C = 18A
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θCS
R_θJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
D²Pak
Max.
600
34
18
68
68
±20
10
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case )
Units
V
A
V
mJ
W
°C
Typ.
–––
0.50
–––
1.44
Max.
1.2
–––
40
–––
Units
°C/W
g (oz)
1
12/28/00