|
IRG4BC30KS_04 Datasheet, PDF (1/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) | |||
|
PD - 95785
INSULATED GATE BIPOLAR TRANSISTOR
Features
 High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
 Combines low conduction losses with high
switching speed
 Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
 Lead-Free
IRG4BC30K-SPbF
Short Circuit Rated
UltraFast IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
Benefits
 As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
 Latest generation 4 IGBTs offer highest power
density motor controls possible
 This part replaces the IRGBC30K-S and
IRGBC30M-S devices
Absolute Maximum Ratings
D 2 Pak
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Â
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)Â
Weight
Max.
600
28
16
58
58
10
±20
260
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfÂin (1.1NÂm)
Typ.
ÂÂÂ
0.5
ÂÂÂ
1.44
Max.
1.2
ÂÂÂ
40
ÂÂÂ
Units
V
A
µs
V
mJ
W
°C
Units
°C/W
g
www.irf.com
1
8/27/04
|
▷ |