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IRG4BC30KDS Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) | |||
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PD -91594C
IRG4BC30KD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
⢠High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
⢠Combines low conduction losses with high
G
switching speed
⢠tighter parameter distribution and higher efficiency
than previous generations
⢠IGBT co-packaged with HEXFREDTM ultrafast,
E
n-channel
ultrasoft recovery antiparallel diodes
Benefits
⢠Latest generation 4 IGBTs offer highest power
density motor controls possible
⢠HEXFREDTM diodes optimized for performance
with IGBTs. Minimized recovery characteristic
reduce noise, EMI and switching losses
⢠This part replaces the IRGBC30KD2-S and
IRGBC30MD2-S products
⢠For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
D 2Pak
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Max.
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfâ¢in (1.1 Nâ¢m)
Units
V
A
µs
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)U
Weight
Typ.
âââ
0.5
âââ
1.44
Max.
1.2
2.5
âââ
40
âââ
Units
°C/W
g
1
4/24/2000
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