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IRG4BC30KDPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD -94910A
IRG4BC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE
UltraFast IGBT
Features
C
 High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
VCES = 600V
 Combines low conduction losses with high
switching speed
G
VCE(on) typ. = 2.21V
 tighter parameter distribution and higher efficiency
than previous generations
 IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
E
n-channel
@VGE = 15V, IC = 16A
 Lead-Free
Benefits
 Latest generation 4 IGBTs offer highest power density
motor controls possible
 HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
 This part replaces the IRGBC30KD2 and IRGBC30MD2
products
 For hints see design tip 97003
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
28
16
56
56
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfÂin (1.1 NÂm)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
Typ.
ÂÂÂ
ÂÂÂ
0.50
ÂÂÂ
2 (0.07)
Max.
1.2
2.5
ÂÂÂ
80
ÂÂÂ
Units
°C/W
g (oz)
www.irf.com
1
02/08/10
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