IRG4BC30KD-SPBF Datasheet, PDF (1/10 Pages) International Rectifier – INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD -95674
IRG4BC30KD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control,
t_sc =10µs, @360V V_CE (start), T_J = 125°C, V_GE = 15V
• Combines low conduction losses with high switching
speed
• tighter parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFRED^TM ultrafast,
ultrasoft recovery antiparallel diodes
• Lead-Free
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
V_CES = 600V
V_{CE(on) typ.} = 2.21V
@V_GE = 15V, I_C = 16A
Benefits
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• HEXFRED^TM diodes optimized for performance with
IGBTs. Minimized recovery characteristic reduce noise,
EMI and switching losses
• This part replaces the IRGBC30KD2-S and
IRGBC30MD2-S products
• For hints see design tip 97003
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
t_sc
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
R_θJC
R_θJC
R_θCS
R_θJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)…
Weight
D ² Pak
Max.
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Typ.
–––
0.5
–––
1.44
Max.
1.2
2.5
–––
40
–––
Units
V
A
µs
V
W
°C
Units
°C/W
g
1
8/11/04