IRG4BC30FD1PBF Datasheet, PDF (1/11 Pages) International Rectifier – Fast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH
HYPERFAST DIODE
Features
• Fast: optimized for medium operating frequencies
(1-5 kHz in hard switching, >20kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3.
• IGBT co-packaged with Hyperfast FRED diodes for ultra low
recovery characteristics.
• Industry standard TO-220AB package.
• Lead-Free
Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specific application conditions.
• FRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less / no
snubbing.
PD - 95614
IRG4BC30FD1PbF
Fast CoPack IGBT
C
V_CES = 600V
G
E
n-channel
V_{CE(on) typ.} = 1.59V
@V_GE = 15V, I_C = 17A
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C
I_CM
I_LM
Continuous Collector Current
c Pulse Collector Current (Ref.Fig.C.T.5)
d Clamped Inductive Load current
I_F @ T_C = 100°C Diode Continuous Forward Current
I_FM
Diode Maximum Forward Current
V_GE
Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
R_θJC
Junction-to-Case- IGBT
R_θJC
Junction-to-Case- Diode
R_θCS
Case-to-Sink, flat, greased surface
R_θJA
Junction-to-Ambient, typical socket mount
Wt
Weight
www.irf.com
TO-220AB
Max.
600
31
17
120
120
8
16
±20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0 (0.07)
Max.
1.2
2.0
–––
80
–––
Units
°C/W
g (oz.)
1
8/2/04