IRG4BC30FD-S Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH
HYPERFAST DIODE
Features
• Fast: optimized for medium operating frequencies
(1-5 kHz in hard switching, >20kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3.
• IGBT co-packaged with HEXFRED^TM ultrafast, ultra-soft
recovery anti-parallel diodes for use in bridge configurations.
PD - 96929
IRG4BC30FD-S
Fast CoPack IGBT
C
V_CES = 600V
G
E
n-channel
V_{CE(on) typ.} = 1.59V
@V_GE = 15V, I_C = 17A
Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specific application conditions.
• HEXFRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less/no
snubbing.
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's.
D²Pak
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C
I_CM
I_LM
Continuous Collector Current
c Pulse Collector Current (Ref.Fig.C.T.5)
d Clamped Inductive Load current
I_F @ T_C = 100°C Diode Continuous Forward Current
I_FM
Diode Maximum Forward Current
V_GE
Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal / Mechanical Characteristics
Parameter
R_θJC
Junction-to-Case- IGBT
R_θCS
R_θJA
Case-to-Sink, flat, greased surface
g Junction-to-Ambient (PCB Mounted,steady state)
Wt
Weight
Max.
600
31
17
120
120
12
120
±20
100
42
-55 to +150
Min.
–––
–––
–––
–––
Typ.
–––
0.50
–––
2.0 (0.07)
Max.
1.2
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz.)
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1
12/02/04