IRG4BC20W-SPBF Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD - 95782
IRG4BC20W-SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Lead-Free
C
G
E
Nⁿ-^-c^ch^ha^anⁿnⁿe^el^l
V_CES = 600V
V_{CE(on) typ.} = 2.16V
@V_GE = 15V, I_C = 6.5A
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300kHz)
D²Pak
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
600
13
6.5
52
52
± 20
200
60
24
-55 to + 150
300 (0.063 in. (1.6mm) from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
R_θJC
R_θCS
R_θJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.5
–––
1.44
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
1
8/27/04