IRG4BC20UDPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – ULTRA FAST COPACK IGBT

PD - 94909A
IRG4BC20UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
SOFT RECOVERY DIODE
UltraFast CoPack IGBT
Features
• UltraFast: optimized for high operating
C
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
V_CES = 600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
G
V_{CE(on) typ.} = 1.85V
• IGBT co-packaged with HEXFRED^â ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
E
n-channel
@V_GE = 15V, I_C = 6.5A
• Industry standard TO-220AB package
• Lead-Free
Benefits
• Generation -4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
TO-220AB
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
13
6.5
52
52
7.0
52
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
R_θJC
R_θJC
R_θCS
R_θJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
2.1
3.5
------
80
------
Units
°C/W
g (oz)
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01/22/10