IRG4BC20UD-SPBF Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD- 95565
IRG4BC20UD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
Features
• UltraFast: Optimized for high operating frequencies
8-40 kHz in hard switching, >200kHz in resonant
mode
• Generation 4 IGBT design provides tighter para-
meter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED^TM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard D²Pak package
• Lead-Free
C
G
E
Nn-chhaannnneell
V_CES = 600V
V_{CE(on) typ.} = 1.85V
@V_GE = 15V, I_C = 6.5A
Benefits
• Generation 4 IGBTs offers highest efficiencies
available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
D²Pak
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
13
6.5
52
52
7.0
52
± 20
60
24
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
R_θJC
R_θCS
R_θJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.5
–––
1.44
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
1
07/15/04