IRG4BC20SDS Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)

PD -91794
IRG4BC20SD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Extremely low voltage drop 1.4Vtyp. @ 10A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFRED^TM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D²Pak package
G
E
n-channel
Standard Speed IGBT
V_CES = 600V
V_{CE(on) typ.} = 1.4V
@V_GE = 15V, I_C = 10A
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
D ²Pak
Max.
600
19
10
38
38
7.0
38
± 20
60
24
-55 to +150
Units
V
A
V
W
°C
Thermal Resistance
R_qJC
R_qJC
R_qJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient ( PCB Mounted,steady-state)*
Weight
Typ.
–––
–––
–––
1.44
Max.
2.1
3.5
80
–––
Units
°C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
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