IRG4BC20SDPBF Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 94939A
IRG4BC20SDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Extremely low voltage drop 1.4Vtyp. @ 10A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFRED^TM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard TO-220AB package
G
E
n-channel
• Lead-Free
Standard Speed IGBT
V_CES = 600V
V_{CE(on) typ.} = 1.4V
@V_GE = 15V, I_C = 10A
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
TO-220AB
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
19
10
38
38
7.0
38
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
R_θJC
R_θJC
R_θCS
R_θJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.1
3.5
–––
80
–––
Units
°C/W
g (oz)
1
01/20/10