IRG4BC20KD-SPBF Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULRTAFAST SOFR RECOVERY DIODE

PD -95677
IRG4BC20KD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, V_GE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED^TM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard D²Pak package
• Lead-Free
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
V_CES = 600V
V_{CE(on) typ.} = 2.27V
@V_GE = 15V, I_C = 9.0A
Benefits
• Latest generation 4 IGBT's offer highest power
density motor controls possible.
•HEXFRED^TM diodes optimized for performance
with IGBTs. Minimized recovery characteristics
reduce noise, EMI and switching losses.
•This part replaces the IRGBC20KD2-S and
IRGBC20MD2-S products.
• For hints see design tip 97003.
Absolute Maximum Ratings
D ² Pak
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
I_FM
t_sc
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Max.
600
16
9.0
32
32
7.0
32
10
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
R_θJC
R_θJC
R_θCS
R_θJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)…
Weight
Typ.
–––
0.5
–––
1.44
Max.
2.1
2.5
–––
40
–––
Units
°C/W
g
8/11/04