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| IRG4BC20K Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) | |||
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PD - 91600A
INSULATED GATE BIPOLAR TRANSISTOR
Features
⢠High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
⢠Combines low conduction losses with high
switching speed
⢠Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
IRG4BC20K
Short Circuit Rated
UltraFast IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
Benefits
⢠As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
⢠Latest generation 4 IGBTs offer highest power
density motor controls possible
⢠This part replaces the IRGBC20K and IRGBC20M
devices
Absolute Maximum Ratings
TO-220AB
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Max.
600
16
9.0
32
32
10
±20
29
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfâ¢in (1.1Nâ¢m)
Units
V
A
µs
V
mJ
W
°C
Typ.
âââ
0.5
âââ
2.0 (0.07)
Max.
2.1
âââ
80
âââ
Units
°C/W
g (oz)
www.irf.com
1
4/24/2000
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