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IRG4BC20FPBF Datasheet, PDF (1/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
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PD - 95742
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20FPbF
Fast Speed IGBT
Features
 Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
 Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
 Industry standard TO-220AB package
 Lead-Free
C
G
E
n-channel
Benefits
 Generation 4 IGBTs offer highest efficiency available
 IGBTs optimized for specified application conditions
 Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Â
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
16
9.0
64
64
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfÂin (1.1NÂm)
Units
V
A
V
mJ
W
°C
Typ.
ÂÂÂ
0.5
ÂÂÂ
2.0 (0.07)
Max.
2.1
ÂÂÂ
80
ÂÂÂ
Units
°C/W
g (oz)
1
8/23/04
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