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IRG4BC15UDPBF Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD - 95613
IRG4BC15UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
 UltraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
⢠IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
⢠Industry standard TO-220AB package
⢠Lead-Free
Benefits
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.02V
@VGE = 15V, IC = 7.8A
 Best Value for Appliance and Industrial Applications
⢠High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
⢠For Low EMI designs- requires little or no snubbing
⢠Single Package switch for bridge circuit applications
⢠Compatible with high voltage Gate Driver IC's
⢠Allows simpler gate drive
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
14
7.8
42
42
4.0
16
± 20
49
19
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfâ¢in (1.1 Nâ¢m)
Units
V
A
V
W
°C
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.50
âââ
2 (0.07)
Max.
2.7
7.0
âââ
80
âââ
Units
°C/W
g (oz)
1
8/2/04
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