IRG4BC15UD Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)

PD - 94082A
IRG4BC15UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ^{UltraFast CoPack IGBT}
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• UltraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
• IGBT Co-packaged with ultra-soft-recovery
G
antiparallel diode
• Industry standard TO-220AB package
E
V_CES = 600V
V_{CE(on) typ.} = 2.02V
@V_GE = 15V, I_C = 7.8A
Benefits
n-channel
• Best Value for Appliance and Industrial Applications
• High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
R_θJC
R_θJC
R_θCS
R_θJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
14
7.8
42
42
4.0
16
± 20
49
19
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.7
7.0
–––
80
–––
Units
°C/W
g (oz)
1
03/20/01