|
IRG4BC10SDPBF Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
|
PD -94904
IRG4BC10SDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed CoPack
ULTRAFAST SOFT RECOVERY DIODE
IGBT
Features
⢠Extremely low voltage drop 1.1Vtyp. @ 2A
⢠S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
⢠Very Tight Vce(on) distribution
⢠IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
⢠Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
⢠Lead-Free
Benefits
⢠Generation 4 IGBTs offer highest efficiencies
available
⢠IGBTs optimized for specific application conditions
⢠HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
⢠Lower losses than MOSFET's conduction and
Diode losses
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
600
V
14
8.0
18
A
18
4.0
18
± 20
V
38
15
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfâ¢in (1.1 Nâ¢m)
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.50
âââ
2.0(0.07)
Max.
3.3
7.0
âââ
80
âââ
Units
°C/W
g (oz)
1
12/23/03
|
▷ |