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IRG4BC10KDPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – High short circuit rating optimized for motor control | |||
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PD -94903
IRG4BC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
⢠High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
⢠Combines low conduction losses with high
switching speed
⢠Tighter parameter distribution and higher efficiency
than previous generations
⢠IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
⢠Lead-Free
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
Benefits
⢠Latest generation 4 IGBTs offer highest power density
motor controls possible
⢠HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfâ¢in (1.1 Nâ¢m)
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.50
âââ
2 (0.07)
Max.
3.3
7.0
âââ
80
âââ
Units
V
A
µs
V
W
°C
Units
°C/W
g (oz)
1
12/23/03
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