IRFZ48RS Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l Drop in Replacement of the IRFZ48
for Linear/Audio Applications
PD - 94074
IRFZ48RS
IRFZ48RL
HEXFET^® Power MOSFET
D
V_DSS = 60V
R_DS(on) = 0.018Ω
I_D = 50*A
S
Description
Advanced HEXFET^® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D²Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing
surface mount package. The D²Pak is suitable for high current
applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
D²Pak
IRFZ48RS
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
V_GS
E_AS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
50*
50*
290
190
1.3
± 20
100
4.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
TO-262
IRFZ44RL
Units
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.8
–––
62
Units
°C/W
1
05/21/02